Mn3Ag(1-)Cu()N antiperovskite thin films with ultra-low temperature coefficient of resistance

• First report on the reactive sputter deposition and post-deposition heat treatment of Mn 3 Ag (1- x ) Cu ( N thin films for ultra-low TCR application. Increasing doping concentration in controls stabilization manganese oxide upper surface layer. The extent oxidation crystallization underlying film are competing events to fine tune electrical properties. Optimising temperature results values better than ±5 ppm/°C resistance stability less 1%. We demonstrate first successful attempt partially substitute into AgN-antiperovskite system form with an coefficient (TCR) fabrication ultra-precise passive components. Films were grown by magnetron sputtering alumina glass substrates found be amorphous nature highly negative -233 -351 their as-grown state. alloying from =0 1, resulted increased sheet resistance, a shift change grain morphology spherical elongated. Post-deposition at 300-375 °C, positive -4.66 =0.6. induces growth, roughness formation layer up until temperatures 350 after which begins dominate. growth rate is controlled temperature, both play central role development these novel structures.